Photoluminescence associated with impurity clusters in phosphorous doped silicon |
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| Authors: | R.R. Parsons |
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| Affiliation: | Physics Department, The University of British Columbia Vancouver, B.C., V6T 1W5, Canada |
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| Abstract: | ![]()
Photoluminescence measurements as a function of excitation level and temperature are presented for Si(P) containing 7.5×1017 P atomd/cm3. The luminescence in Si(P) for intermediate concentrations in the range from 1×1016 to 2×1018 cm?3 is interpreted in terms of recombination of trapped carriers at clusters of impurities. |
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