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Semiconductor-metal transition in doped (CH)x: Thermoelectric power
Authors:Y.W. Park  A. Denenstein  C.K. Chiang  A.J. Heeger  A.G. MacDiarmid
Affiliation:Laboratory for Research on the Structure of Matter University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
Abstract:
Thermoelectric power studies of polyacetylene have been carried out as a function of dopant concentration and temperature. The thermopower of pure trans-(CH)x is large (S = +850 μ V°K) and positive consistent with p-type material. With iodine doping, (CHIy)x, the thermopower remains positive over the full range of concentration 0 < y < 0.22. The semiconductor-metal transition is clearly observed at nc ? 3 mole %; S falls dramatically from S = +850 μ V°K at y = 0.003 to S = +30 μ V°K at y = 0.03. At higher concentrations, S remains nearly constant saturating at +18 μ V°K in the heavily doped metallic polymer. Temperature dependences are consistent with metallic behavior at the highest dopant concentrations and hopping transport in the undoped and lightly doped polymer.
Keywords:
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