Semiconductor-metal transition in doped (CH)x: Thermoelectric power |
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Authors: | Y.W. Park A. Denenstein C.K. Chiang A.J. Heeger A.G. MacDiarmid |
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Affiliation: | Laboratory for Research on the Structure of Matter University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA |
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Abstract: | ![]() Thermoelectric power studies of polyacetylene have been carried out as a function of dopant concentration and temperature. The thermopower of pure trans-(CH)x is large and positive consistent with p-type material. With iodine doping, (CHIy)x, the thermopower remains positive over the full range of concentration 0 < y < 0.22. The semiconductor-metal transition is clearly observed at nc ? 3 mole %; S falls dramatically from at y = 0.003 to at y = 0.03. At higher concentrations, S remains nearly constant saturating at in the heavily doped metallic polymer. Temperature dependences are consistent with metallic behavior at the highest dopant concentrations and hopping transport in the undoped and lightly doped polymer. |
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