GaN基高压发光二极管理想因子与单元个数关系研究

理想因子能够反映电流、载流子泄漏以及缺陷导致的非辐射复合等现象. 针对目前报道的GaN基发光二极管的理想因子的问题, 通过对高压发光二极管I-V曲线的拟合计算出了理想因子n的数值, 分别讨论了12 V, 19 V, 51 V 和80 V GaN基高压发光二极管的理想因子与其结构中串联晶粒个数的关系, 分析了理想因子大小与光谱半高宽(FWHM)的变化关系. 另外, 还对电流拥挤效应对理想因子的影响进行了分析. 结果表明: 高压发光二极管理想因子n随串联晶粒个数的增加几乎为线性规律增加, 高压发光二极管理想因子n是由其串联单元理想因子之和构成的. 这对GaN基高压发光二极管理想因子的研究具有参考价值.

Research on the relationship b etween ideality factor and numb er of units of GaN-based high voltage light-emitting dio de

Ideality factor can reflect the current, the carrier leakage, and the phenomenon of non-radiative recombination in light-emitting diode (LED). For the problem of ideality factor from current report about GaN-based LED, the value of ideality factor n is calculated by using the I-V curve fitting of high voltage LED. And the relationship between the ideality factor and the number of units is series in 12, 19, 51 and 80 V GaN-based high-voltage LED are discussed. In addition, the relationship between ideality factor and spectral half width (FWHM) is analyzed, and the impact of current crowding effect on the ideality factor is also studied. Results show that the ideality factor n increases nearly linearly with the number of units in series, indicating that the ideality factor n of high voltage LED is composed of its series units. It is a valuable result for understanding the ideality factor of GaN-based high voltage LED.