Plasma deposition of silicon nitride-like thin films from organosilicon precursors

Plasmas containing hexamethyldisilazane or hexamethylcyclotrisilazane and nitrogen or ammonia were used to deposit silicon nitride-like films at low substrate temperature (T<60°C). Optical properties (refractive index and absorption coefficient), chemical composition of the deposit and film growth rate were examined with respect to the deposition parameters (rf power, pressure and feed composition). As deposited films from ammonia containing mixtures were silicon nitride-like, contained carbon, and were nearly oxygen free. Furthermore, only Si−N, Si−H, and N−H bonds were identified in as-deposited films. The reactive Si−H bonds progressively transformed into Si−O bonds as the films were exposed to air. Films deposited from highly ammonia-diluted mixtures, high RF power and low pressure showed the highest stability with refractive indices as high as 1.8.