Fabrication of Porous Metal Oxide Semiconductor Films by a Self-Template Method Using Layered Hydroxide Metal Acetates |
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Authors: | Shinobu Fujihara Eiji Hosono Toshio Kimura |
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Institution: | 1. Department of Applied Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
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Abstract: | Porous metal oxide (Co3O4, NiO, or ZnO) films were fabricated by a self-template method using layered hydroxide metal acetates (LHMA; metal = Co, Ni, or Zn) as templates. LHMAs were initially grown on glass substrates through a chemical bath deposition in methanolic-aqueous solutions of metal acetates at 60°C. The template films had a unique, nest-like morphology consisting of interlaced flake-like particles as a result of two-dimensional crystal growth of LHMAs in supersaturated solutions. The templates were successfully converted into porous Co3O4, NiO, or ZnO films by heating at 500°C for 10 min in air without microstructural deformation. |
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