首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Fabrication of Porous Metal Oxide Semiconductor Films by a Self-Template Method Using Layered Hydroxide Metal Acetates
Authors:Shinobu Fujihara  Eiji Hosono  Toshio Kimura
Institution:1. Department of Applied Chemistry, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
Abstract:Porous metal oxide (Co3O4, NiO, or ZnO) films were fabricated by a self-template method using layered hydroxide metal acetates (LHMA; metal = Co, Ni, or Zn) as templates. LHMAs were initially grown on glass substrates through a chemical bath deposition in methanolic-aqueous solutions of metal acetates at 60°C. The template films had a unique, nest-like morphology consisting of interlaced flake-like particles as a result of two-dimensional crystal growth of LHMAs in supersaturated solutions. The templates were successfully converted into porous Co3O4, NiO, or ZnO films by heating at 500°C for 10 min in air without microstructural deformation.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号