Effect of tunnel resonances on fluxon radiation loss in a long S-I-S tunnel junction with weak structural disorder in the I layer

The expression for the density of the bias current, which compensates for the radiation loss of a fluxon moving in an S-I-S (superconductor-insulator-superconductor) tunnel junction with tunnel resonances-quantum resonant percolation trajectories (quantum jumpers), randomly formed in the disordered I layer [1], has been derived. The substantial physical difference between the described model and the model with microjumpers in the I layer [2] is that radiation friction acts on fluxon only in the narrow energy range of tunnel resonances.