X-ray interferometric investigations of structural distortions in silicon crystals as a result of diffusion

The influence of boron diffusion on the X-ray Moiré pattern is investigated by means of X-ray interferometry. It is shown that at low boron concentrations in silicon, the Moiré patterns indicate the non-dislocative character of arising stresses. At higher concentrations the dislocations arise. Basing on the obtained topogram, the maximum local stress is evaluated, which at boron concentration of 2.5 · 10¹⁹ at/cm³ is 1.05 · 10⁸ N/m².