Semiconducting behavior of type-I Si clathrate K8Ga8Si38 |
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| Authors: | Imai Motoharu Sato Akira Udono Haruhiko Imai Yoji Tajima Hiroyuki |
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| Affiliation: | National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. IMAI.Motoharu@nims.go.jp |
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| Abstract: | A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure. |
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