Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field |
| |
| Affiliation: | 1. College of Physics and Electronic Engineering, Henan Normal University, Xinxiang 453007, China;2. Department of Physics, Zhengzhou Normal University, Zhengzhou, Henan 450044, China;3. School of Mathematics & Physics, Henan University of Urban Construction, Pingdingshan 467036, China;1. College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;1. State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, China;2. College of Computer, National University of Defense Technology, Changsha 410073, China;3. College of Science, National University of Defense Technology, Changsha 410073, China;4. College of Opto-Electronic Science and Engineering, National University of Defense Technology, Changsha 410073, China;1. Department of Civil Engineering, Shanghai University, Shanghai 200072, China;2. Shanghai Institute of Applied Mathematics and Mechanics, Shanghai 200072, China;1. Institute of Applied Physics of the Academy of Sciences of Moldova, Academic Str. 5, Chisinau MD2028, Republic of Moldova;2. Nordic Institute for Theoretical Physics (NORDITA) KTH and Stockholm University, Roslagstullsbacken 23, 106 91 Stockholm, Sweden;1. Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, China;2. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China;3. Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai, 200433, China |
| |
| Abstract: | ![]()
Using density functional theory calculations, we investigate the electronic properties of arsenene/graphene van der Waals (vdW) heterostructures by applying external electric field perpendicular to the layers. It is demonstrated that weak vdW interactions dominate between arsenene and graphene with their intrinsic electronic properties preserved. We find that an n-type Schottky contact is formed at the arsenene/graphene interface with a Schottky barrier of 0.54 eV. Moreover, the vertical electric field can not only control the Schottky barrier height but also the Schottky contacts (n-type and p-type) and Ohmic contacts (n-type) at the interface. Tunable p-type doping in graphene is achieved under the negative electric field because electrons can transfer from the Dirac point of graphene to the conduction band of arsenene. The present study would open a new avenue for application of ultrathin arsenene/graphene heterostructures in future nano- and optoelectronics. |
| |
| Keywords: | Schottky barrier Electric field Arsenene/graphene vdW heterostructures |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
