Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice |
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| Institution: | State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, China;Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 23026, China;Semiconductor Devices, PO Box 2250, Haifa 31021, Israel;SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel;Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91030, United States;School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, China;Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USA;Wuhan Guide Infrared Co., Ltd., Wuhan 430205, China |
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| Abstract: | In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of ?170 mV, respectively. And the dark current density under 0 and ?170 mV of applied bias are 1.076 × 10?5 A/cm2 and 2.16 × 10?4 A/cm2. The specific detectivity of MWIR band and LWIR band are 2.15 × 1012 cm·Hz1/2/W at 3.2 μm and 2.31 × 1010 cm·Hz1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 1010 cm·Hz1/2/W at the wavelength range from 4.3 μm to 10.2 μm under ?170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of ?170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K. |
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| Keywords: | Infrared detector Type II superlattice Molecular beam epitaxy Focal plane array |
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