Modelling of high-temperature dark current in multi-quantum well structures from MWIR to VLWIR |
| |
| Affiliation: | 1. Aeronautics Institute of Technology, ITA, Praça Mal. Eduardo Gomes, 50, 12228-900 São José dos Campos, SP, Brazil;2. Division of Applied Physics – Institute for Advanced Studies, IEAv, Trevo Cel. Av. José A. A. do Amarante, 1, 12228-001 São José dos Campos, SP, Brazil;1. Department of Inorganic and Physical Chemistry, Eastern European National University, 13 Voli Avenue, Lutsk 43025, Ukraine;2. Laboratory of Nanosciences Research (LNR), E.A. no 4682, UFR Sciences, University of Reims, 21 rue Clément Ader, 51685 Reims Cedex 02, France;3. Research Chair of Exploitation of Renewable Energy Applications in Saudi Arabia, Physics and Astronomy Department, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451, Saudi Arabia;4. Physics Department, Faculty of Science, Ain Shams University, Abbassia, Cairo 11566, Egypt;5. Wireless and Photonic Networks Research Centre, Faculty of Engineering, Universiti Putra Malaysia, 43400 Serdang, Selangor, Malaysia;6. Institute of Physics, Czestochowa University of Technology, Armii Krajowej 13/15, PL-42-201 Czestochowa, Poland;7. Faculty of Electrical Engineering, Czestochowa University Technology, Armii Krajowej 17, Pl-42-201 Czestochowa, Poland;8. Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, 79010 Lviv, Ukraine;9. Department of Physics and Mathematics, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St., 50, 79010 Lviv, Ukraine;10. Department of Solid''s Spectroscopy, G. V. Kurdyumov Institute for Metal Physics of the National Academy of Science of Ukraine, Bulvar Akademika Vernadskogo, 36, Kiev 03680, Ukraine;1. Department of Physics, Arab-American University, Jenin, West Bank, Palestinian Authority;2. Department of Basic Sciences and Humanities, College of Engineering, University of Dammam, Dammam, Saudi Arabia;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. School of Quantitative Sciences, Universiti Utara Malaysia, 06010 Sintok, Kedah, Malaysia;2. COMSATS Institute of Information Technology, Attock 43600, Punjab, Pakistan;1. Moscow Institute of Physics and Technology, Russia;2. Physics Research Laboratory, Voronezh Technical State University, Russia |
| |
| Abstract: | In this paper, a model to calculate the dark current of quantum well infrared photodetectors at high-temperature regime is presented. The model is derived from a positive-definite quantum probability-flux and considers thermionic emission and thermally-assisted tunnelling as mechanisms of dark current generation. Its main input data are the wave functions obtained by time-independent Schrodinger equation and it does not require empirical parameters related to the transport of carriers. By means of this model, the dark current of quantum well infrared photodetectors at high-temperature regime is investigated with respect to the temperature, the barrier width, the applied electric field and the position of the first excited state. The theoretical results are compared with experimental data obtained from lattice-matched InAlAs/InGaAs, InGaAsP/InP on InP substrate and AlGaAs/GaAs structures with rectangular wells and symmetric barriers, whose absorption peak wavelengths range from MWIR to VLWIR. The corresponding results are in a good agreement with experimental data at different temperatures and at a wide range of applied electric field. |
| |
| Keywords: | Quantum well Dark current Probability-flux operator Semiconductor devices Infrared photodetectors Computational modelling |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
