Conductive diamond hollow fiber membranes |
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| Authors: | Takeshi Kondo Sangchul Lee Kensuke Honda Takeshi Kawai |
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| Affiliation: | 1. Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510, Japan;2. Center for Colloid and Interface Science, Tokyo University of Science, 2641 Yamazaki, Noda 278-8510, Japan;3. Department of Industrial Chemistry, Faculty of Engineering, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan;4. Department of Chemistry and Earth Sciences, School of Science, Yamaguchi University, 1677-1 Yoshida, Yamaguchi 753-8512, Japan |
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| Abstract: | Boron-doped diamond hollow fiber membrane (BDD–HFM) was fabricated as a novel type of porous conductive diamond. BDD–HFM was obtained by deposition of BDD polycrystalline film onto a quartz filter substrate consisting of quartz fibers, followed by etching of the substrate in HF/HNO3 aqueous solution. Cross-sectional scanning electron microscope (SEM) observation showed the inner diameter and wall thickness of the BDD hollow fibers were in the range of 0.4–2 and 0.2–2 μm, respectively. The BDD–HFM electrode exhibited a relatively large double-layer capacitance (ca. 13 F g−1) in 0.1 M H2SO4. Electrochemical AC impedance properties were simulated using an equivalent circuit model containing a transmission line model, which indicated characteristics of a porous electrode material. |
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| Keywords: | Boron-doped diamond (BDD) Porous electrode Hollow fiber membrane Double-layer capacitance AC impedance |
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