a Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
b Institute of Physics AS CR, Cukrovarnicka 10, Prague 16253, Czech Republic
Abstract:
Luminescence properties of heavily Yb-doped Lu3Al5O12 (Yb:LuAG) and Lu3Ga5O12 (Yb:LGG) single crystals grown by micro-pulling-down method were characterized. Charge transfer luminescence of Yb3+ was observed in both crystals. Photoluminescence spectra, temperature dependence of emission intensity and decay kinetics of these crystals were studied. Mean decay time of about 24 ns at 90 K (Yb5%:LuAG) and 21 ns at 110 K (Yb5%:LuGG) were observed. Strong thermal quenching at room temperature was measured for both Yb:LuAG and Yb:LGG.