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| 贵金属—GaAs(110)界面价带紫外光电子谱 | |
| 引用本文： | 潘士宏,莫党,秦关根,W. E. SPICER. 贵金属—GaAs(110)界面价带紫外光电子谱[J]. 物理学报, 1987, 36(10): 1255-1263 |
| 作者姓名： | 潘士宏 莫党 秦关根 W. E. SPICER |
| 作者单位： | (1)美国斯坦福大学; (2)南开大学; (3)中山大学 |
| 摘 要： | 本文研究了贵金属-CaAs(110)界面形成过程中hν=21.2eV和40.8eV的价带光电子谱的演化,在小于0.5单原子层淀积金属时,观察到所谓原子样Ag5s和Au6s态。大约从10埃到几十埃的淀积金属范围内,发现贵金属价带发射极大值现象。用金属原子团的形成、岛状生长与界面反应相关的观点讨论了实验结果。关键词： |
| 收稿时间： | 1986-10-17 |
A STUDY ON VALENCE-BAND PHOTOEMISSION SPECTRA OF NOBLE METAL-GaAs(110) INTERFACES |
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| PAN SHI-HONG,MO DANG,K. K. CHYN and W. E. SPICER. A STUDY ON VALENCE-BAND PHOTOEMISSION SPECTRA OF NOBLE METAL-GaAs(110) INTERFACES[J]. Acta Physica Sinica, 1987, 36(10): 1255-1263 | |
| Authors: | PAN SHI-HONG MO DANG K. K. CHYN W. E. SPICER |
| Abstract: | The evolution of valence hand photoemission spectra in the formation of noble metal-GaAs (110) interfaces has been studied with 21.2 eV and 40.8 eV photons. For less than 0.5 mono-layer of deposited metals, the so-called atomic-like Ag 5s and Au 6s states have been observed. A maximum in the emission of the valence band of noble metals has been observed in the range from about 10 ? to a few tens ? of deposited metals. The experiment results are discussed with the point of view of metal clustering associated with interfacial reaction. Keywords： |
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