Low threshold, actively Q-switched Nd:YVO4 self-Raman laser and frequency doubled 588 nm yellow laser |
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Authors: | Baoshan Wang Huiming Tan Jieguang Miao Lanlan Gao |
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Affiliation: | a Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Jilin 130033, China b Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | ![]() We reported an actively Q-switched, intracavity Nd3+:YVO4 self-Raman laser at 1176 nm with low threshold and high efficiency. From the extracavity frequency doubling by use of LBO nonlinear crystal, over 3.5 mW, 588 nm yellow laser is achieved. The maximum Raman laser output at is 182 mW with 1.8 W incident pump power. The threshold is only 370 mW at a pulse repetition frequency of 5 kHz. The optical conversion efficiency from incident to the Raman laser is 10%, and 1.9% from Raman laser to the yellow. |
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Keywords: | 42.55.Xi 42.55.Ye 42.65.Dr 42.65.Ky |
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