Catalyst‐free thermally‐evaporated growth and optical properties of ZnO nanowires on Si,GaN and sapphire substrates

Vertically well‐aligned zinc oxide nanowires (NWs) with high density were successfully synthesized on Si, sapphire and GaN/sapphire substrates by thermal evaporation of zinc powders without catalysts or additives. The growth behavior of ZnO NWs was strongly dependent on the substrate materials. The effects of the substrate position on the structures and properties of ZnO NWs were primarily discussed. The morphology and crystallinity of the resultant NWs were studied by scanning electron microscope, transmission electronic microscope and X‐ray diffraction. The photoluminescence (PL) characteristics of the ZnO NWs on the different substrates were studied. The results showed that the as‐grown ZnO NWs exhibit a sharp and strong ultraviolet emission at 3.27 eV and a very weak green emission at around 2.48 eV, indicating that the a‐synthesized NWs have excellent PL properties with good crystalline quality and can be an ideal candidate for making luminescent devices. By comparison of PL spectra, we revealed that the green‐to‐UV emission intensity ratios were considerably dependent on the substrate materials, which was explained by the difference in the structural morphology of the produced nanowires.