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Characterization of doped diamond-like carbon films deposited by hot wire plasma sputtering of graphite
Authors:Email author" target="_blank">VN?VasiletsEmail author  A?Hirose  Q?Yang  A?Singh  R?Sammynaiken  M?Foursa  YM?Shulga
Institution:(1) Institute for Energy Problems of Chemical Physics, Chernogolovka, Moscow region, 142432, Russia;(2) Plasma Physics Laboratory, Univ. of Saskatchewan, 116 Science Place, Saskatoon, SK, S7N 5E2, Canada;(3) Univ. of Saskatchewan, Department of Chemistry, 110 Science Place, Saskatoon, SK, S7N 5C9, Canada;(4) Institute of Problems of Chemical Physics, Chernogolovka, Moscow reg., 142432, Russia
Abstract:Diamond-like carbon (DLC) films doped with nitrogen and oxygen were deposited on silicon(100) and polytetrafluoroethylene (PTFE) substrates by hot wire plasma sputtering of graphite. The morphology and chemical composition of deposited films has been characterized by scanning electron microscopy, XPS, Auger, FTIR spectroscopy and micro-Raman scattering. Plasmon loss structure accompanying the XPS C 1s peak and electron energy loss spectroscopy (EELS) in reflection mode was used to study the fraction of sp3 bonded C atoms and the density of valence electrons. Raman spectra show two basic C–C bands around 1575 cm-1 (G line) and 1360 cm-1 (D line) . Auger depth profiling spectroscopy was used to measure the spatial distributions of C, N and O atoms in the surface layer of DLC films. The fraction of sp3 bonded atoms of about 40% was detected in DLC films by XPS plasmon loss and EELS techniques. Nitrile and iso-nitrile groups observed in FTIR spectra demonstrated the existence of sp bonded carbon in doped DLC films. The typical for DLC films specific density 1.7–1.8 g/cm3 was obtained from EELS and XPS data. PACS 52.77.Dq; 81.65.-b; 82.80.Pv
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