Thermoelectric power measurements in polycrystalline AgI: Cd system

Thermoelectric power of polycrystalline AgI: Cd system was measured as a function of temperature from 50 to 180°C. The heat of transport $\text{Q}{}^1$, intrinsic vacancy concentration c_o and ratio of interstitial to vacancy mobilities in the β phase were deduced under the assumption of no association. The heat of transport $\text{Q}{}^1$ was also temperature dependent in β-AgI: 0.27 eV at 80°C, 0.21 eV at 100°C and 0.17 eV at 120°C. It was estimated that the formation energy of the defect pair h_F was 0.66 ± 0.06 eV and the activation energies for motion of vacancies and interstitials were 0.55 ± 0.03 and 0.38 ± 0.03 eV, respectively. These approximately agree with data reported up to date in single and poly- crystal β-AgI. The heat of transport of vacancies was approximately equal to the activation energy of vacancy migration.