Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100) |
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Authors: | N Koguchi K Masumoto |
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Institution: | National Research Institute for Metals, Meguro-Ku, Tokyo 153, Japan |
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Abstract: | Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr2?xInxSe4(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l06A/m. The conductivity decreases rapidly near the Curie temperatureTc (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near Tc. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10?2 m2/V · s at 6.3 K, and decreases rapidly near Tc with the rise in temperature. Then it increases slowly from 5.5 × 10?4 m2/V · s at 160 K to 7.5 × 10?4 m2/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments. |
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