Diffusion of gallium into cadmium sulphide

Measurements of the Ga diffusion into CdS, in the presence of exces Ga metal, using optical and mixroprobe analyser techniques are reported. A reaction layer of CdGa₂S₄ forms on the CdS crystals below 1240±20 K. Above this temperature the reaction layer is liquid. The Ga diffusion is concentration dependent and also orientation dependent with the faster diffusion perpendicular to the hexagonal c-axis of CdS. The anisotropy of the activation energy was calculated to be 0.20±0.06 eV. In the temperature range 940–1240K the linearly concentration dependent diffusion yielded activation energy values for defect motion of 2.39±0.13 eV perpendicular to the c-direction and 2.21 ±0.13 eV parallel to the c-direction.