Electronic structure and spin polarization at the NiMnSb/GaAs(110) interface |
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Authors: | S V Eremeev A V Bakulin and S E Kul’kova |
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Institution: | 1.Institute of Strength Physics and Materials Science, Siberian Branch,Russian Academy of Sciences,Tomsk,Russia;2.Tomsk State University,Tomsk,Russia |
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Abstract: | Within the density functional theory, ab initio calculations of the electronic structure and magnetic properties of the (110)
interface between the NiMnSb alloy and GaAs in dependence on configuration of contact atoms are carried out. It is found that
two out of six possible atomic configurations of the interface exhibit a high degree of spin polarization, which attains 100%
for one of the interfacial structures studied here. It is shown that contacts with a high degree of spin polarization are
the most stable with an adhesion energy of about 1.3 J/m2. |
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Keywords: | |
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