Growth kinetics and polysilicon formation by aluminium-induced crystallization on glass-ceramic substrates |
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| Authors: | ? Tüzün A Slaoui C Maurice S Vallon |
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| Institution: | (1) Institute of Photo-electronics, Nankai University, Tianjin, 300071, China;(2) The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin, China;(3) Key Laboratory of Opto-electronic Information Science and Technology, Nankai University and Tianjin University, Ministry of Education, Tianjin, 300071, China;(4) Department of electronic and computer engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, P. R. China; |
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| Abstract: | In this work, we present extended structural properties of poly-Si thin films fabricated by aluminium-induced crystallization
(AIC) of amorphous silicon (a-Si) on high-temperature glass-ceramic substrates. The silicon nucleation kinetics on glass-ceramic
substrates was investigated by optical microscopy. The crystalline quality of the films was studied by micro-Raman spectroscopy
as a function of exchange annealing conditions. By means of electron backscattering diffraction (EBSD), we have analyzed the
effect of thermal annealing on silicon grain size and its distribution, intra- and inter-grains defects, and on the grains
preferential crystallographic orientation. The optimal thermal annealing condition, allowing 100% crystallized polysilicon
large grains with an average grain size of 26 μm and 〈100〉 oriented, acquired a thermal budget of 475°C and 8 h. |
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