22 nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究

利用计算机辅助设计技术数值仿真工具, 研究22 nm工艺技术节点下超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应, 系统地分析了掺杂地平面技术、重离子入射位置、栅功函数和衬底偏置电压对于单粒子瞬态效应的影响. 模拟结果表明, 掺杂地平面和量子效应对于单粒子瞬态效应影响很小, 重离子入射产生大量电荷, 屏蔽了初始电荷分布的差异性. 单粒子瞬态效应以及收集电荷和重离子入射位置强相关, 超薄体全耗尽绝缘体上硅最敏感的区域靠近漏端. 当栅功函数从4.3 eV变化到4.65 eV时, 单粒子瞬态电流峰值从564 μA减小到509 μA, 收集电荷从4.57 fC减小到3.97 fC. 超薄体全耗尽绝缘体上硅器件单粒子瞬态电流峰值被衬底偏置电压强烈调制, 但是收集电荷却与衬底偏置电压弱相关.关键词：超薄体全耗尽绝缘体上硅单粒子瞬态效应电荷收集数值仿真

Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node

Single-event-transient response of 22-nm technology ultra-thin-body fully-depleted silicon-on-insulator transistor is examined by technology computer-aided design numerical simulation. The influences of ground plane doping, heavy ion injection location, gate work function and substrate bias on single-event-transient characteristic are systematically studied and analyzed. Simulation results show that the influences of ground plane doping and quantum effects on single-event-transient (SET) are relatively small. The SET characteristics and collected charge are strike-location sensitive. The most SET-sensitive region in ultra-thin-body fully-depleted silicon-on-insulator transistor is located near the drain region. When gate work function varies from 4.3 eV to 4.65 eV, the transient current peak is reduced from 564 μA to 509 μA and the collected charge decreases from 4.57 fC to 3.97 fC. The transient current peak is strongly affected by substrate bias. In contrast, the total collected charge depends only weakly on substrate bias.
Keywords：ultra-thin-body fully-depleted silicon-on-insulatorsingle-event-transientcharge collectionnumerical simulation