A cluster study of aluminum adsorption on Ga-rich GaAs(100)(2 × 1) and β (4 × 2) surfaces |
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Authors: | M L Mayo A K Ray |
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Institution: | (1) Physics Department, University of Texas at Arlington, Arlington, Texas 76019, USA |
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Abstract: | Ab initio self-consistent total energy calculations using second order
Møller-Plesset perturbation theory and Hay-Wadt effective core potentials
with associated basis sets (HWECP’s) for gallium and arsenic have been used
to investigate the chemisorption properties of atomic aluminum on the
Ga-rich GaAs(100)-(2 × 1) and β(4 × 2) surfaces. Finite sized
hydrogen saturated clusters with the experimental zinc-blende lattice
constant of 5.654 Å and the energy optimized Ga dimer bond length of
2.758 Å have been used to model the semiconductor surface. To
investigate the effects of the core electrons of aluminum in the adsorption
process, we have represented the Al adatom with both HWECP’s and an all
electron 6-311++G** basis set. Detailed energetics of chemisorption on the
(100) surface, including chemisorption energies, nearest surface neighbor
bond lengths, and Mulliken population analysis, have been reported for all
considered sites of chemisorption. |
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