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Thermostimulated recombination processes in LiBaF3 crystals |
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| Authors: | P Kulis I Tale I Gromuls M Nikl N Ichinose K Shimamura |
| Institution: | a Institute of Solid State Physics, University of Latvia, 8 Kengaraga st., Riga LV-1063, Latvia b Institute of Physics, ASCR, Cukrovarnická 10, Prague 16253, Czech Republic c Laboratory of Material Science and Technology, Waseda University 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan |
| Abstract: | The creation of radiation defects in LiBaF3 crystals at 10 K and the processes of their thermostimulated recombination are investigated. The methods of optical absorption, thermal bleaching of color centers, thermostimulated luminescence and fractional glow technique are used. The radiation defects anneal in a multi-stage process accompanied with thermo-luminescence at 20, 46, 105, 130, 170, 210 and 270 K. Differences in the optical absorption spectra measured before and after the TSL peaks are obtained and recombination parameters are determined. The TSL peak at 20 K arises from the delocalization of H-centers. The presence of two TSL peaks related to VK-centers at 105 and 130 K indicates that 60° and 90° migration hops occur. |
| Keywords: | LiBaF3 Radiation defects TSL Absorption |
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