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A mathematical model for the formation of inhomogeneous structures in thermally oxidized silicon layers |
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| Authors: | Corresponding Member of the RAS G. Ya. Krasnikov N. A. Zaitsev I. V. Matyushkin |
| Affiliation: | (1) AOOT Research Institute of Molecular Electronics and Micron Plant, Zelenograd, Moscow, 103460, Russia |
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