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Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution |
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| Authors: | Grashchenko A S Kukushkin S A Osipov A V |
| Institution: | 1.Institute for Problems in Mechanical Engineering, Russian Academy of Sciences, 199178, St. Petersburg, Russia ;2.Herzen State Pedagogical University, 191186, St. Petersburg, Russia ;3.ITMO University, 197101, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of nanoscale... |
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