|
|||||
|
|
Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion |
|
| Authors: | Tarasov A S Ishchenko D V Akimov A N Akhundov I O Golyashov V A Klimov A E Pashchin N S Suprun S P Fedosenko E V Sherstyakova V N Tereshchenko O E |
| Institution: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 660090, Novosibirsk, Russia ; |
| Abstract: | Technical Physics - High-resistance Pb1 –xSnxTe〈In〉 layers grown by molecular beam epitaxy on BaF2(111) substrates with compositions close to band inversion have been... |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |