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On Change in the Silicon Crystal Structure Implanted with Hydrogen Ions during Annealing Based on Three-Crystal X-Ray Diffractometry Data |
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| Authors: | Asadchikov V. E. D’yachkova I. G. Zolotov D. A. Chukhovskii F. N. Sorokin L. M. |
| Affiliation: | 1.Federal Research Center Crystallography and Photonics, Shubnikov Institute of Crystallography,Russian Academy of Sciences, 119333, Moscow, Russia ;2.Ioffe Institute, 194021, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation... |
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