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Unusual X-Shaped Defects in the Silicon Single Crystal Subjected to Four-Point Bending |
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| Authors: | Zolotov D. A. Asadchikov V. E. Buzmakov A. V. Dyachkova I. G. Suvorov E. V. |
| Affiliation: | 1.Shubnikov Institute of Crystallography, Federal Scientific Research Center Crystallography and Photonics, Russian Academy of Sciences, 119333, Moscow, Russia ;2.Institute of Solid State Physics, Russian Academy of Sciences, 142432, Chernogolovka, Moscow region, Russia ; |
| Abstract: | JETP Letters - Dislocations in single-crystal silicon created by the four-point bending method are investigated using a laboratory X-ray source. Two- and three-dimensional diffraction images in the... |
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