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Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy |
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| Authors: | Timoshnev S. N. Mizerov A. M. Benemanskaya G. V. Kukushkin S. A. Buravlev A. D. |
| Affiliation: | 1.St. Petersburg National Research Academic University, Russian Academy of Sciences, St. Petersburg, Russia ;2.Ioffe Institute, St. Petersburg, Russia ;3.St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia ; |
| Abstract: | Physics of the Solid State - The results of experimental studies of the electronic and photoemission properties of the GaN epitaxial layer grown by molecular beam epitaxy with plasma activation of... |
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