Influence of Se atoms on the properties of amorphous Ge

Electron spin resonance (ESR), electrical and optical measurements have been made for Ge_1?xSe_x (0?x?0.35) films in order to elucidate relations between tetrahedrally bonded amorphous semiconductors and chalcogenide amorphous semiconductors. The ESR signal due to dangling bonds in amorphous Ge decreases by increasing Se content. For more than about 20 at. % Se, the electrical conductivity is the activation type and the optical gap increases with the increase of Se content. The model of charged dangling bonds by Street and Mott seems to explain the experimental results.