Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling |
| |
| Authors: | WV McLevige KV Vaidyanathan BG Streetman J Comas L Plew |
| |
| Institution: | Coordinated Science Laboratory and Department of Electrical Engineering University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA;Naval Research Laboratory, Washington, D.C. 20375, USA;Naval Weapons Support Center, Crane, IN 47522, USA |
| |
| Abstract: | Secondary ion mass spectrometry (SIMS) has been used with differential resistivity and Hall effect measurements to study the 900°C diffusion of implanted Be in GaAs. Some outdiffusion of Be into the Si3N4 encapsulant occurs for surface Be concentrations above 1 × 1018cm?3. However, excellent agreement between the electrical and atomic profiles indicates that 85–100% of the Be remaining after annealing is electrically active. The concentration-dependent diffusion observed for implanted Be in GaAs was not significantly altered in experiments using hot substrate implants, two-step anneals, or annealing with Ga and As overpressure. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
