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Endoepitaxial growth of hexagonal-Fe13Ge8 islands on Cubic-Ge(001) |
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| Authors: | Zhi-Peng Li Eng Soon Tok Yong Lim Foo |
| Affiliation: | 1. Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 Singapore, Singapore;2. Global Research Center for Environment and Energy based on Nanomaterials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;3. Institute of Materials Research and Engineering, 3 Research Link, S117602 Singapore, Singapore |
| Abstract: | The growth and shape evolution of epitaxial Fe13Ge8 (hexagonal lattice) islands on single crystal Ge(001) (cubic lattice) substrate was observed in real time using an in situ ultra-high vacuum transmission electron microscope (TEM). Post-deposition high-resolution TEM in conjunction with stereographic projection enabled the identification of the interface structure between the Fe13Ge8 islands and the Ge substrate. Only one low-energy coherent interface formed via Fe13Ge8 islands growing into the substrate along the inclined Ge(11?1) plane. This indicates that minimization of net interfacial energy is the driving force for hexagonal Fe13Ge8 islands formation on Ge(001). |
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