Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with p-Type ZnO:N Layer Formed by Radical N2O Doping |
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Authors: | SUN Jing-Chang LIANG Hong-Wei ZHAO Jian-Ze BIAN Ji-Ming FENG Qiu-Ju WANG Jing-Wei ZHAO Zi-Wen DU Guo-Tong |
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Institution: | School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 |
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Abstract: | ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395nm and 490nm are detected from this device at forward current higher than 20mA at room temperature. |
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Keywords: | 61 72 Uj 82 33 Ya 78 60 Fi |
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