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Atomic structure of Bi-dimer row selectively adsorbed on Si(5 5 12)-2 × 1 surface
Authors:Sanghee Cho
Institution:Department of Physics, Chonbuk National University, Dukjin-dong 1 Ga 664-14, Chonju 561-756, Korea
Abstract:In order to understand the atomic structure of nanostructures self-assembled on the template with one-dimensional symmetry, Bi/Si(5 5 12) system has been chosen and Bi-adsorption steps have been studied by STM. With Bi adsorption, the clean Si(5 5 12) is transformed to (3 3 7) terraces with disordered boundary due to mismatched periodicities between (3 3 7) and (5 5 12), and Bi-dimer rows are formed inside the (3 3 7) unit as follows: Initially, when Bi atoms are deposited at the adsorption temperature of about 450 °C, they selectively replace Si-dimers and Si-adatoms and form adsorbed Bi-dimers and Bi-adatoms, respectively. If additional Bi is supplied, the Bi-dimers adsorb on the Bi-dimers and Bi-adatoms in the first layer. These adsorbed dimers in the second layer are facing each other to form a Bi-dimer pair with relatively stable p3bonding. Finally, a single Bi-dimer adsorbs above the Bi-dimer pair in the second layer, at which point the Bi layer thickness saturates. It has been concluded that the Bi-dimer pair with stable p3 bonding is the composing element in the second layer and such site-selective adsorption is possible due to the substrate-strain relaxation through inserting Bi-buffer layer limited to specific sites of the substrate.
Keywords:Silicon  Bismuth  Chemisorption  Scanning tunneling microscopy  Surface structure  morphology  roughness  and topography
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