| 半导体中扩散方程初始边界问题的解的渐近性 |
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| 引用本文： | WANG Wen-bin,LIU Shu-mei (Department of Mathematics,Puyang Occupation Technique College,Puyang 457000,China, Kaifeng Education College,Kaifeng 475002,China). 半导体中扩散方程初始边界问题的解的渐近性[J]. 数学季刊, 2005, 20(2): 185-191 |
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| 作者姓名： | WANG Wen-bin LIU Shu-mei (Department of Mathematics Puyang Occupation Technique College Puyang 457000 China Kaifeng Education College Kaifeng 475002 China) |
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| 作者单位： | Department of Mathematics，Puyang Occupation Technique College，Puyang 457000，China; Kaifeng Education College，Kaifeng 475002，China |
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| 摘 要： | In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and initial value, we prove that the smooth solutions to these evolutionary problems tend to the unique stationary solution exponentially as time tends to infinity.
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| 关 键 词： | 漂移扩散函数 初边值问题 渐近性质 解 半导体 |
Asymptotic of the Solutions to the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors |
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| WANGWen-bin LIUShu-mei. Asymptotic of the Solutions to the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors[J]. Chinese Quarterly Journal of Mathematics, 2005, 20(2): 185-191 |
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| Authors: | WANGWen-bin LIUShu-mei |
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| Affiliation: | [1]DepartmentofMathematics,PuyangOccupationTechniqueCollege,Puyang457000,China [2]KaifengEducationCollege,Kaifeng475002,China |
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| Abstract: | In this paper, we study the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and initial value, we prove that the smooth solutions to these evolutionary problems tend to the unique stationary solution exponentially as time tends to infinity. |
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| Keywords: | drift diffusion equations initial boundary value problems asymptotic behavior |
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