Hot electron light-emitting and lasing semiconductor heterostructures--type 1 |
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| Affiliation: | 1. School of Physics and Engineering, and Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, China;2. First-class Disciplinesans and High-level University Construction Office, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;3. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;4. School of Physical Science and Technology, Nanjing Normal University, Nanjing 210023, China;1. Department of Physics, Government Degree College Darra Adam Khel, FR Kohat, Pakistan;2. Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR;3. Materials Modeling Lab, Department of Physics, Islamia College University, Peshawar, Pakistan;4. Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan;5. Chemical engineering department, College of engineering, King Saud University, Saudi Arabia;1. Centre for Theoretical and Computational Molecular Science, Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Qld 4072, Australia;2. Integrated Nanotechnology Research Center, Department of Physics, Khon Kaen University, Khon Kaen, Thailand;3. Nanotec-KKU Center of Excellence on Advanced Nanomaterials for Energy Production and Storage, Khon Kaen, Thailand |
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| Abstract: | ![]()
A new light-emitting device has been proposed based on the incorporation of a GaAs quantum well on the n-side, and in the depletion region, of a Ga1-xAlxAs p-n junction, where the bias is applied parallel to the layers. Light is emitted when electrons and holes on the n- and p-side of the structure, respectively, heated by the applied longitudinal electric field, transfer to the quantum well, by resonant tunnelling and thermionic emission (electrons) and diffusion (holes), where they recombine radiatively. The intensity of the light emitted is independent of the polarity of the applied bias. A demonstration of the device is presented and it is shown that the quantum well needs to be in the depletion region for light emission to occur. The device is modelled theoretically by solving the Schrödinger's and Poisson's equations self-consistently by including the carrier dynamics for hot electrons and holes. |
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