Resonant tunneling single electron transistors |
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| Affiliation: | 1. V.G. Mokerov Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow, Russia;2. Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny, Russia;3. Belarusian State University, Minsk, Belarus;4. Institute for Physics of Microstructures of RAS, Nizhny Novgorod, Russia;5. Institute of Radio-Engineering and Electronics of RAS, Moscow, Russia;1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;2. Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou 341300, China;1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China;2. Chongyi Zhangyuan Tungsten Industry Corporation Limited, Ganzhou, 341300, China;1. Material Simulation Laboratory, Department of Physics, Iran University of Science and Technology, Narmak, 16846-13114, Tehran, Iran;2. Computational Physical Science Laboratory, Department of Nano-Science, Institute for Research in Fundamental Sciences (IPM), PO Box 19395-5531, Tehran, Iran;1. Qatar Environment and Energy Research Institute, Hamad bin Khalifa University, Qatar Foundation, Doha, Qatar;2. Department of Physics, King Fahd University of Petroleum and Minerals, 31261 Dhahran, Saudi Arabia;3. Saudi Center for Theoretical Physics, 31261 Dhahran, Saudi Arabia;4. Departement Fysica, Universiteit Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium;1. Department of Physics, University of Sistan and Baluchestan, Zahedan, Iran;2. Young Researchers and Elite Club, Quchan Branch, Islamic Azad University, Quchan, Iran;3. Department of Physics, Ferdowsi University of Mashhad, Mashhad, Iran;4. Department of Chemical and Biomolecular Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA;5. Department of Physics, Faculty of Science, University of Hormozgan, P.O. Box 3995, Bandar Abbas, Iran;6. Institute of Molecule and Crystal Physics, Ufa Research Center of RAS, Prosp. Oktyabrya, 151, 450075 Ufa, Russia;7. National Research Tomsk State University, Lenin Ave, 36, 634050 Tomsk, Russia |
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| Abstract: | We use a modulation-doped double barrier heterostructure to fabricate a resonant tunneling single electron transistor. Irregular Coulomb blockade oscillations are observed when the gate voltage is swept to vary one-by-one the number of electrons in the dot close to 'pinch-off'. The oscillation period is not regular, and generally becomes longer as the electron number is decreased down to zero, reflecting the growing importance of electron-electron interactions and size quantization. Negative differential resistance associated with resonant tunneling through zero-dimensional states is pronounced for a dot holding just a few electrons. The temperature dependence of the Coulomb blockade oscillations and that for the negative differential resistance are not the same. This highlights the different effects of charging and resonant tunneling on the transport characteristics. |
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