| 不同化学镀液中p－Si上激光诱导局部沉积铜 |
| |
| 引用本文： | 姜贵凤,郁祖湛. 不同化学镀液中p－Si上激光诱导局部沉积铜[J]. 应用化学, 1996, 0(2): 18-21 |
| |
| 作者姓名： | 姜贵凤 郁祖湛 |
| |
| 作者单位： | 复旦大学化学系 上海 200433 |
| |
| 摘 要： | 在化学镀铜浴液中,p-Si片在彼长为514.5nm的激光束的照射下,得到了选择性的铜镀层。采用AEs、SEM、RBS和电学技术对比了在3种含不同还原剂的镀液中得到的镀层的形貌、组成、界面扩散及电学性质;探讨了液相激光诱导化学沉积铜的机理。
|
| 关 键 词： | 化学镀铜 激光诱导沉积 |
| 收稿时间： | 1995-06-28 |
| 修稿时间： | 1995-10-30 |
Laser-Induced Selective Deposition of Copper on p-Silicon Wafers |
| |
| Jiang Guifeng,Yu Zuzhan. Laser-Induced Selective Deposition of Copper on p-Silicon Wafers[J]. Chinese Journal of Applied Chemistry, 1996, 0(2): 18-21 |
| |
| Authors: | Jiang Guifeng Yu Zuzhan |
| |
| Affiliation: | Department of Chemistry, Fudan University, Shanghai 200433 |
| |
| Abstract: | A process is described to selectively deposit thin copper films from electroless copper plating solutions on p-silicon wafers. The p-silicon was locally irradiated using a 5 W CW Ar laser. At the irradiated area,the copper film was formed.In this process.three kinds of thin copper films were obtained from the solutions containing different reductants. Composition and properties of the deposits were investigated using AES, SEM and RBS techniques. |
| |
| Keywords: | electroless plating laser-induced deposition |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《应用化学》浏览原始摘要信息 |
|
点击此处可从《应用化学》下载全文 |
|
