Two-dimensional direct simulation Monte Carlo (DSMC) of reactiveneutral and ion flow in a high density plasma reactor

We present a two dimensional direct simulation Monte Carlo (DSMC) study of the rarefied reactive flow of neutrals and ions in a low pressure inductively coupled plasma reactor. The spatially-dependent rate coefficients of electron impact reactions and the electrostatic field were obtained from a fluid plasma simulation. Neutral and ion etching of polysilicon with chlorine gas was studied with emphasis on the reaction uniformity along the wafer. Substantial gradients in total gas density were observed across the reactor invalidating the commonly made assumption of constant gas density. The flow was nonequilibrium with differences in the species translational temperatures, and 100 K temperature jumps near the walls. When etching was limited by ions the etch rate was highest at the wafer center. When etching was limited by neutrals, the etch rate was highest at the wafer edge. In such case, the etch uniformity changed significantly depending on the reactivity of the ring surrounding the wafer. The ion angular distribution was several degrees off normal and it was different at the wafer edge compared to the rest of the wafer