Improved electric properties in BiFeO3 films by the doping of Ti

We prepared BiFe_1−x Ti _x O_3+δ (BFTO) films by sol gel process and various oriented films were deposited on LaNiO₃ coated SiO₂/Si substrates with different x. The effects of Ti substitution on dielectric, ferroelectric, magnetic and leakage conduction properties in BFTO system have been studied. Enhanced ferroelectricity was observed at room temperature due to the substitution of Ti. The largest double remnant polarization of 3.8 μC/cm² was acquired in the film with x = 0.10. Further more, it was observed that the dielectric constants were also enhanced by the substitution of Ti. The film with x = 0.10 has the largest dielectric constant below 100 kHz and Debye-like relaxation were observed in the films with x = 0.05 and 0.10. The leakage conduction was reduced with the increasing of the content of Ti. More over, the magnetism was also altered by the substitution.