|
|||||
|
|
Temperature dependence of electron properties of Sn doped nanobelts |
|
| Authors: | Adenilson J. Chiquito Marcia T. Escote Marcelo O. Orlandi Alexandre J.C. Lanfredi Edson R. Leite Elson Longo |
| Affiliation: | aDepartamento de Física, Universidade Federal de São Carlos, CEP 13565-905, CP 676, São Carlos, São Paulo, Brazil bCentro de Engenharia, Modelagem e Ciências Sociais Aplicadas, Universidade Federal do ABC, Rua Catequese 242, CEP 09090-900, Santo André, SP, Brazil cDepartamento de Física e Química, Universidade Estadual Paulista, CP 31, CEP 15385-000, Ilha Solteira, SP, Brasil dLIEC-CMDMC, Departamento de Química, Universidade Federal de São Carlos, Km 235, CP 676, CEP 13565-905, São Carlos, Brazil eInstituto de Química, Universidade Estadual Paulista – Araraquara, R. Prof. Francisco Degni, s/n, CEP 14801 907 Araraquara, SP, Brazil |
| Abstract: | This paper reports on the measurements of transport properties of high crystalline quality Sn doped In2O3 nanobelts. The samples presented metallic conduction in a large range of temperatures; however, at low temperatures, the resistivity showed a slight increase and the current–voltage curves showed a tendency to saturate even in the low-voltage range. From these observations, we discuss some arguments on the possibility of low dimensional conducting channels as the main responsible for the conduction at low temperatures. Additionally, we present an alternative technique for production of low resistance ohmic contacts, which can be further used in devices’ construction. |
| Keywords: | In2O3 Nanowires Metallic conduction |
| 本文献已被 ScienceDirect 等数据库收录！ | |