能级填充对量子阱光学性质的影响

在特殊设计的三势垒双势阱结构中，利用来自发射极的电子注入和电子向收集极的共振隧穿 逃逸调控量子阱不同子能级上的填充状态，发现激发态上的电子占据起抑制量子限制Stark 效应的作用.在极低偏压下，量子阱中少量过剩电子诱发了用简单带—带跃迁无法解释的光致发光光谱行为. 关键词：共振隧穿光致发光量子限制Stark效应过剩电子

Influence of level filling on optical properties of quantum well

In a specially-designed three-barrier-double-well tunneling structure,electron injecting from the emitter in combination with escaping through a resonant-tunneling structure were used to adjust and control the filling of electrons in different subbands. It was observed that the occupation in the first-excited electron state can result in a suppression to quantum confinement Stark effect. Moreover,at very low bias,a series of intrigue photoluminescence peaks appeared as a small quantity of excess electron was filled in the ground state of the quantum well,that cannot be explained by the theory of band-to-band transition in the framework of single electron picture.