Quantitative measurements of Ge surface segregation during SiGe alloy growth |
| |
Authors: | Glenn G. Jernigan Phillip E. Thompson Conrad L. Silvestre |
| |
Affiliation: | Naval Research Laboratory Code 6812, 4555 Overlook Avenue SW., Washington, DC 20375, USA |
| |
Abstract: | Ge segregation during the growth of Si1 − xGex alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation. |
| |
Keywords: | Molecular beam epitaxy Silicon-germanium Surface segregation X-ray photoelectron spectroscopy |
本文献已被 ScienceDirect 等数据库收录! |
|