ONP Spectroscopy of Defects in Silicon |
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| Authors: | N. T. Bagraev I. S. Polovtsev |
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| Affiliation: | (1) Ioffe Physical-Technical Institute, 194021 St.Petersburg, Russia |
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| Abstract: | Optical nuclear polarization technique is used to study metastable properties of the gold donor center in silicon. A model of a deep defect’s symmetry changing C 3V → C 1h → D 2d with its charge state (D− → D0 → D+) is proposed to account for the observed optically induced quenching and regeneration of Au0 centers. |
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