Mechanism of the rf sputtering of mixed oxides |
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Authors: | V M Mukhortov G N Tolmachev Yu I Golovko A I Mashchenko |
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Institution: | (1) Institute of General Physics, Russian Academy of Sciences, 117942 Moscow, Russia |
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Abstract: | New experimental data on the growth mechanisms of multicomponent Pb(Zr,Ti)O3, (Ba,Sr)TiO3, and Y-Ba-Cu-O films in an rf discharge plasma are presented. An investigation of the spatial distribution of the radiated
intensity of the sputtered particles in the rf plasma during the deposition of films of these mixed oxides in the epitaxial
state reveals general laws governing their transport from the target to the substrate, which are stipulated by features of
the negative glow of the rf discharge. The roles of external and internal parameters are examined from the standpoint of describing
the mechanisms of the heteroepitaxial growth of mixed oxides.
Zh. Tekh. Fiz. 68, 99–103 (September 1998) |
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