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Mechanism of the rf sputtering of mixed oxides
Authors:V M Mukhortov  G N Tolmachev  Yu I Golovko  A I Mashchenko
Institution:(1) Institute of General Physics, Russian Academy of Sciences, 117942 Moscow, Russia
Abstract:New experimental data on the growth mechanisms of multicomponent Pb(Zr,Ti)O3, (Ba,Sr)TiO3, and Y-Ba-Cu-O films in an rf discharge plasma are presented. An investigation of the spatial distribution of the radiated intensity of the sputtered particles in the rf plasma during the deposition of films of these mixed oxides in the epitaxial state reveals general laws governing their transport from the target to the substrate, which are stipulated by features of the negative glow of the rf discharge. The roles of external and internal parameters are examined from the standpoint of describing the mechanisms of the heteroepitaxial growth of mixed oxides. Zh. Tekh. Fiz. 68, 99–103 (September 1998)
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