An investigation of dielectric resonator antenna produced from silicon (100) enhanced by strontium doped-barium zirconate films |
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Authors: | Wan Fahmin Faiz Wan Ali Nik Akmar Rejab Mohamadariff Othman Mohd Fadzil Ain Zainal Arifin Ahmad |
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Institution: | (1) School of Materials & Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia;(2) School of Electrical & Electronics Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Penang, Malaysia; |
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Abstract: | Dip-coated Ba1−x
Sr
x
ZrO3 thick films with different Ba/Sr ratios (x = 0.0, 0.1, 0.3, 0.5, 0.7 and 0.9) were fabricated on Si (100-orient) substrate at a low temperature of 800 °C via the sol
gel method. The experimental results show that dielectric resonator (DR) properties of Ba1−x
Sr
x
ZrO3 films depend on the different Ba/Sr ratios. For structural characterization, the X-ray analysis revealed that phase transformation
was affected by the increase in Sr concentrations for heat treatment at 800 °C. The films were crystalline and of single phase.
The thickness of one BSZ film is around 1.259 μm when measured using the field emission scanning electron microscope. The
BSZ film’s surface morphology as indicated by the atomic force microscopy showed the mean grain size to be in the range of
2.56 to 94.34 μm, and the surface roughness (RMS) was recorded to be between 2.35 to 19.64 nm. The dielectric resonator (DR)
properties were measured using a network analyzer. By introducing Ba1−x
Sr
x
ZrO3 (BSZ) films on the high dielectric Si (100-orient) substrate, better frequency stability was achieved i.e. within the range
of 8–10 GHz. Measured results show that Si (100-orient) DRA has a 10 dB impedance bandwidth of 4.11% at 9.34 GHz and the BSZ
improved this to 11.34% with x = 0.7 at 9.15 GHz. The radiation pattern was observed to be stable throughout the operating frequency and holds good potential
for DR applications. |
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Keywords: | |
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