Resonance Raman effect in thiourea |
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Authors: | Takahiko Ishiguro Ei-ichiro Suzuki Akiko Y. Hirakawa Masamichi Tsuboi |
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Affiliation: | Faculty of Pharmaceutical Sciences, University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113, Japan |
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Abstract: | Raman spectra of thiourea have been observed in H2O and D2O solutions with the exciting laser beams of 514.5, 488.0, 457.9, 363.8, 325.0, and 257.3 nm. The resonance Raman excitation profile of the 729-cm?1 line has been examined in the region of the 237-nm absorption band () by use of a solvent shift of the absorption band instead of by changing the wavelength of the exciting beam. The depolarization degree of this line was measured and its overtone Raman line was also observed. On the basis of the results of these experiments, it has been concluded that the 729-cm?1 Raman line, assignable to the CS stretching vibration, derives its intensity solely from the 237-nm band when it is excited at 257.3 or 325.0 nm. On exciting in the region 363.8–514.5 nm, however, contributions of the higher-frequency bands are predominant rather than the contribution from the 237-nm band. The Raman line at 1520 cm?1 of thiourea-d4 is assignable to the NCN antisymmetric stretching vibration. From its excitation profile, its intensity has been considered to come from a vibronic coupling between the excited electronic states of the 220-nm () and the 197-nm () bands. |
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