Changes in gold concentration at the surface of a AuCu alloy sputtered at low temperature |
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Authors: | Ri-Sheng Li T Koshikawa K Goto |
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Institution: | Department of Applied Electronics, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572, Japan;Department of Fine Measurement, Nagoya Institute of Technology, Gokiso-cho, Showaku, Nagoya 466, Japan |
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Abstract: | A series of depth profiles in Au0.56Cu0.44 produced by bombarding at ? 120°C with an argon ion beam of 2 keV energy and current densities of 4, 6, 12 and 24 μA/cm2, respectively, are presented. Gold is enriched in the top layer but the concentration rapidly decreases to a minimum at an average depth of about 2 Å, then increases slowly and saturates at about 30 Å. The change in the composition at this point is called a dip. The magnitude of the dip depends on the ion current density, but the depth is nearly independent of it. Segregation and diffusion effects in establishing the surface composition are stressed. |
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